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IGBT Full Form Hindi. Associations & Organizations >> Conferences & Events. IGBT stands for Insulated-Gate Bipolar Transistor. A three-terminal power semiconductor known as an Insulated-Gate Bipolar Transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to integrate high performance and quick switching. The metal-oxide-semiconductor (MOS) gate structure controls its four alternating layers (P-N-P-N). The Insulated Gate Bipolar Transistor has a standard bipolar transistor at the outputs and an insulated gate from a MOSFET at the inputs. The IGBT's conduction pins are the collector and emitter terminals. The control terminal is at the input gate terminal. The gate terminal regulates the conduction. Electric vehicles, locomotives, variable-speed refrigerators, light ballasts, arc welding equipment, and air conditioning systems are a few examples of high-power applications requiring switching power sources like IGBT. When BJT and MOSFET cannot produce the desired outcomes in high current applications, IGBT is employed in various electronic switching applications. This two-transistor hybrid device has voltage-controlled properties similar to MOSFETs and switching and conduction properties similar to BJTs. There are two main categories for IGBT devices, such as: i) Non-Punch Through IGBT [NPT-IGBT] In the event of a short-circuit failure, these devices are more robust and thermally stable.

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