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A estimativa é que mais de 10.000 pessoas estejam presentes para o jogo 1 da série contra os Celtics. No dia 13 de maio, o dono da franquia, Mark Cuban, disse que os Mavericks tinham aprovação do governo para receberem até 9.000 torcedores no American Airlines Center. Os Nuggets terão até 7.750 fãs na Ball Arena em jogos de playoff, cerca de 40% da capacidade do local. O Staples Center tem operado com cerca de 30% da capacidade (aproximadamente 6.000 pessoas) de torcedores nas últimas partidas. O Staples Center tem operado com cerca de 30% da capacidade (aproximadamente 6.000 pessoas) de torcedores nas últimas partidas.
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BJT has a low input impedance (a few kilo-ohms), a MOSFET has a high input impedance (megaohm). In the analog and digital circuits, MOSFET is considered to be more commonly used compare to BJT now these days. MOSFET's in higher voltage ratings have much more conduction loss. BJTs are available with ratings up to 1200 V and 800 A, and MOSFETs are available with ratings upon 500 V and 140 A. BJT depends on the current at the base terminal and the MOSFET depends on the voltage at the oxide-insulated gate electrode. MOSFET structure is more complex than BJT. Publication number CN102035191A CN102035191A CN2010106088997A CN201010608899A CN102035191A CN 102035191 A CN102035191 A CN 102035191A CN 2010106088997 A CN2010106088997 A CN 2010106088997A CN 201010608899 A CN201010608899 A CN 201010608899A CN 102035191 A CN102035191 A CN 102035191A Authority CN China Prior art keywords temperature termination another termination igbt output Prior art date 2010-12-28 Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Granted Application number CN2010106088997A Other languages Chinese ( zh ) Other versions CN102035191B ( en Inventor 蔡旸正 Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Guangdong East Power Co Ltd Original Assignee Guangdong East Power Co Ltd Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) 2010-12-28 Filing date 2010-12-28 Publication date 2011-04-27 2010-12-28 Application filed by Guangdong East Power Co Ltd filed Critical Guangdong East Power Co Ltd 2010-12-28 Priority to CN 201010608899 priority Critical patent/CN102035191B/en 2011-04-27 Publication of CN102035191A publication Critical patent/CN102035191A/en 2013-04-10 Application granted granted Critical 2013-04-10 Publication of CN102035191B publication Critical patent/CN102035191B/en Status Active legal-status Critical Current 2030-12-28 Anticipated expiration legal-status Critical. The invention discloses an insulated gate bipolar transistor (IGBT) module over-temperature protection circuit, which comprises a three-end adjustable shunt reference source TL431, resistors R1-R9, a negative temperature coefficient resistor temperature sensor RT, LM324N operational amplifiers U1A, U1B, U1C and U1D and capacitors C1 and C2. Tv clube ao vivo online.Marco Polo 837R$ 777archivist Sorocaba.
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