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Awards of the PCIM Europe Conference 2022 announced. I was making some research on GaN and I do not understand why GaN is so reveolutionnary. When I take a look on the following specification RdsOn and Coss (Cds + Cgd), the GaN semiconductor has lower performance than the Si IGBT on RdsOn. About the Coss/Coes the test condition are not the same and it is a bit harder to compare Here is the GaN specification (LMG342xR030) Here is the IGBT specification (SK75GD066T) So why the GaN is so revolutionnary? https://www.semikron.com/products/product-classes/igbt-modules/detail/sk-75-gd-066-t-24912420.html https://www.ti.com/lit/ds/symlink/lmg3422r030.pdf?ts=1652979339992&ref_url=https%253A%252F%252Fwww.ti.com%252Fproduct%252FLMG3422R030 Thank you very much and have a nice day! -----------------------E D I T ------------------------------------ According to the comments, I changed the GaN datasheet and the IGBT datasheet for helping the comparaison between the both. I decided to compare the IGBT IKD06N60RATMA1 and the GaN LMG3410R070. Here are the respective datasheets: https://www.mouser.fr/datasheet/2/196/Infineon-IKD06N60R-DS-v02_05-EN-1226890.pdf https://www.ti.com/lit/ds/symlink/lmg3410r070.pdf?ts=1653036430455&ref_url=https%253A%252F%252Fwww.ti.com%252Fproduct%252FLMG3410R070 Firstly as Hearth told me, the equivalent modele of the IGBT is not the same than the GaN HEMT. I decided to consider the output characteristics for comparing the power dissipated through the semiconductor. Here is the one of the IGBT: So at 18 A it has a voltage drop of 2.4 V @ Vge = 20 V (best case), it means a power dissipation of 43.2 W. Here is the output characteristics: It is fairly linear and it seems to correspond with the RdsOn given into the datasheet: So for 18 A through 70 mOhm, the voltage drop is 1.26 V. So the dissipated power is 22.68 W, which give a ratio of 1.9 between the both devices. Pixbet tem aplicativo.So you have to read the bonus terms & conditions before claiming a zero-wager bonus.
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