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Figure 2 represents the way how to connect the floated ground with the respective points in the circuit. Therefore, it is recommended that the IGBT under test is placed at the high side, and the auxiliary switch can be switched directly by a simple low-side gate driver or a high-current pulse generator (e.g., IXDI630CI-ND). In this case, the gate voltage of the DUT is supplied by an isolated DC/DC converter chip (CUI Inc. PQS075-S), which can offer an isolation level of 1.5 kV. The output voltage provided by this converter is internally regulated so that it always keeps the output voltage for supplying the gate constant at 15 volts. Here, an auxiliary switch similar to the test IGBT switch is selected (the typical switching frequency for the chosen IGBT ranges from 20 kHz to 30 kHz, which can provide the required pulse width 50 μs). The frequency of the signal generator is set to 1 Hz (1 s for each cycle); thus, a short current pulse 50 μs can be generated every one second during the cycle. A MOSFET can also be used as the auxiliary switch, but the problem with MOSFETs is that the internal resistance of the MOSFET ( R ds ( on ) on-state resistance) is usually greater than the current sensing resistor value, and the changes in this MOSFET’s internal resistance are very sensitive to current. Since the voltage of the power supply is limited within a range, the higher currents can be achieved from the power supply at a lower voltage if the total resistance of the circuit is lower, which makes it more reasonable to use IGBTs as the axillary switch instead of MOSFETs. Notably, the problem of altering the resistance value still remains unsolved, and after passing a high-amplitude current pulse, the current sensing resistance value may also change. For this reason, an accurate/fast six-digit multimeter must always be used to measure resistance.

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